tlp731,TLP732 2002-09-25 1 toshiba photocoupler gaas ired & photo ? transistor tlp731,TLP732 office machine household use equipment solid state relay switching power supply the toshiba tlp73 1 and TLP732 consist of a photo ? transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic dip package. TLP732 is no ? base internal connection for high ? emi environments. collector ? emitter voltage: 55v (min.) current transfer ratio: 50% (min.) rank gb: 1 00% (min.) ul recognized: ul 1 577, file no. e67349 bsi approved: bs en60065: 1 994 certificate no. 66 1 7 bs en60950: 1 992 certificate no. 7366 isolation voltage: 4000v rms (min.) option (d4) type vde approved: din vde0884 / 08.87, certificate no. 65640 maximum operating insulation voltage: 630v pk highest permissible over voltage: 6000v pk (note) when a vde0884 approved type is needed, please designate the ?option (d4)? 7.62mm pich 1 0. 1 6mm pich standard type (lf2) type creepage distance : 7.0mm (min.) 8.0 mm (min.) clearance : 7.0 mm (min.) 8.0 mm (min.) insulation thickness : 0.5 mm (min.) 0.5 mm (min.) pin configurations (top view) unit in mm toshiba 11 ? 7b1 weight: 0.35 g
tlp731,TLP732 2002-09-25 2 maximum ratings (ta = 25c) characteristic symbol rating unit forward current i f 60 ma forward current derating (ta 39c) ? i f / c 0.7 ma / c peak forward current (100s pulse, 100pps) i fp 1 a power dissipation p d 100 mw power dissipation derating (ta 25c) ? p d / c 1.0 mw / c reverse voltage v r 5 v led junction temperature t j 125 c collector emitter voltage v ceo 55 v collector base voltage (tlp731) v cbo 80 v emitter collector voltage v eco 7 v emitter base voltage (tlp731) v ebo 7 v collector current i c 50 ma power dissipation p c 150 mw power dissipation derating (ta 25c) ? p c / c 1.5 mw / c detector junction temperature t j 125 c storage temperature range t stg 55~125 c operating temperature range t opr 55~100 c lead soldering temperature (10s) t sol 260 c total package power dissipation p t 250 mw total package power dissipation derating (ta 25c) ? p t / c 2.5 mw / c isolation voltage (ac, 1min., r.h. 60%) bv s 4000 v rms recommended operating conditions characteristic symbol min. typ. max. unit supply voltage v cc D 5 24 v forward current i f D 16 25 ma collector current i c D 1 10 ma operating temperature t opr 25 D 85 c
tlp731,TLP732 2002-09-25 3 individual electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 10ma 1.0 1.15 1.3 v reverse current i r v r = 5v D D 10 a led capacitance c t v = 0, f = 1mhz D 30 D pf collector emitter breakdown voltage v (br)ceo i c = 0.5ma 55 D D v emitter collector breakdown voltage v (br)eco i e = 0.1ma 7 D D v collector base breakdown voltage (tlp731) v (br)cbo i c = 0.1ma 80 D D v emitter base breakdown voltage (tlp731) v (br)ebo i e = 0.1ma 7 D D v v ce = 24v D 10 100 na collector dark current i ceo v ce = 24v, ta = 85c D 2 50 a collector dark current (tlp731) i cer v ce = 24v, ta = 85c r be = 1m ? D 0.5 10 a collector dark current (tlp731) i cbo v cb = 10v D 0.1 D na dc forward current gain (tlp731) h fe v ce = 5v, i c = 0.5ma D 400 D D detector capacitance collector to emitter c ce v = 0, f = 1mhz D 10 D pf coupled electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit 50 D 600 current transfer ratio i c / i f i f = 5ma, v ce = 5v rank gb 100 D 600 % D 60 D saturated ctr i c / i f (sat) i f = 1ma, v ce = 0.4v rank gb 30 D D % base photo current (tlp731) i pb i f = 5ma, v cb = 5v D 10 D a i c = 2.4ma, i f = 8ma D D 0.4 D 0.2 D collector emitter saturation voltage v ce (sat) i c = 0.2ma, i f = 1ma rank gb D D 0.4 v
tlp731,TLP732 2002-09-25 4 isolation characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit capacitance (input to output) c s v s = 0, f = 1mhz D 0.8 D pf isolation resistance r s v s = 500v 110 12 10 14 D ? ac, 1 minute 4000 D D ac, 1 second, in oil D 10000 D v rms isolation voltage bv s dc, 1 minute, in oil D 10000 D v dc switching characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit rise time t r D 2 D fall time t f D 3 D turn on time t on D 3 10 turn off time t off v cc = 10v, i c = 2ma r l = 100 ? D 3 10 s turn on time t on D 2 D storage time t s D 15 D turn off time t off r l = 1.9k ? (fig.1) r be = open v cc = 5v, i f = 16ma D 25 D s turn on time t on D 2 D storage time t s D 12 D turn off time t off r l = 1.9k ? (fig.1) r be = 220k ? (tlp731) v cc = 5v, i f = 16ma D 20 D s fig. 1 switching time test circuit
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tlp731,TLP732 2002-09-25 9 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ebc restrictions on product use
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